Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 1987,26(2):63-68.
Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 1987,26(2):63-68.DOI:
Using a soft x-ray photoemission spectroscopy (SXPS)
a chemical reaction is observed on the GaAs(110) surface with about 0.7 monolayer (ML) coverage of oxygen when Al is deposited at room temperature. The Al(<1ML)tendentiously reacts with surface oxygen bonded with As
then A1(>1ML) reacts with the others bonded with Ga
until all of the oxygen is consumed and additional Al replaces Ga in subsurface layers of the GaAs to form AlAs and drive Ga out across the interface. SXPS results show that on a similar oxygen covered surface only weak reaction is observed when Au deposition is below 1 ML. It is quite evident that additional Au (>1ML) disturbs the As-O bond and produces stable Ga oxide which inhibits the Ga below the oxide layer into Au