Optical Properties of Sputtered GaAs Films and Investigation of Effective-Medium Models
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Optical Properties of Sputtered GaAs Films and Investigation of Effective-Medium Models
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 25, Issue 3, Pages: 92-98(1986)
作者机构:
1. 中山大学物理系
2. 中国科学院上海冶金研究所
作者简介:
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DOI:
CLC:
Published:1986,
Published Online:25 May 1986,
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Chen Shuguang, Li Xiqiang. Optical Properties of Sputtered GaAs Films and Investigation of Effective-Medium Models. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 25(3):92-98(1986)
DOI:
Chen Shuguang, Li Xiqiang. Optical Properties of Sputtered GaAs Films and Investigation of Effective-Medium Models. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 25(3):92-98(1986)DOI:
Optical Properties of Sputtered GaAs Films and Investigation of Effective-Medium Models
Some nearly stoichiometric GaAs films have been prepared by rf sputteringand the relations between structure and composition of film and technologicalconditions have been investigated.The optical properties of samples have beenmeasured by spectroscopic ellipsometry.The results show that the absorptioncoefficient of GaAs film is much larger than that of the crystalline
but thedielectric constant and the optical gap are lower.We have used an effectivemedium approximation to calculate the volume fraction for several phases offilm