Studies of Damage Profile in Ion Implanted Si by Spectroscopic Ellipsometry:An Optimization Method of Multilayer Model

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Studies of Damage Profile in Ion Implanted Si by Spectroscopic Ellipsometry:An Optimization Method of Multilayer Model

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- Studies of Damage Profile in Ion Implanted Si by Spectroscopic Ellipsometry:An Optimization Method of Multilayer Model
- Acta Scientiarum Naturalium Universitatis SunYatseni Vol. 25, Issue 3, Pages: 84-91(1986)
- 作者机构：
  
  中山大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1986，
  
  Published Online：25 May 1986，
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Studies of Damage Profile in Ion Implanted Si by Spectroscopic Ellipsometry:An Optimization Method of Multilayer Model. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 25(3):84-91(1986)
DOI：

Studies of Damage Profile in Ion Implanted Si by Spectroscopic Ellipsometry:An Optimization Method of Multilayer Model. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 25(3):84-91(1986) DOI：

摘要

应用多层模型和最优化方法

由实验测得的离子注入Si 的椭偏光谱

以及c-Si 和离子注入α-Si 的光学常数

不用剥层测量

能分析离子注入Si 的损伤分布.本文讨论了多层模型计算原理和椭偏光谱法的灵敏度

模拟分析了Levenberg-Marquardt 最优化方法的数学过程、模型误差与计算误差、实验误差(随机误差和系统误差)以及Si 表面自然氧化层对最优化数学过程的影响.

Abstract

By means of optimization with a multilayer model

the damage profile ofion implanted Si can be obtained from a number of independent data measuredby spectroscopic ellipsometry as well as optical constants of crystalline and ionimplanted amorphous state of Si.We discussed the calculation principle of multi-layer models and

using a simulated test

analysed the mathematical procedure ofLevenberg-Marquardt optimization method with special attention to the influenceof model errors

calculating errors

rando merrors

systematic errors and nativeoxide layer on the surface of Si

关键词

&nbsp多层模型层数损伤度椭偏光谱法损伤分布离子注入离子掺杂最优化方法运筹学方法Si

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Related Institution

中山大学物理学系

Department of Chemistry,Zhongshan University

中国科学院华南植物研究所

中山大学计算机科学系

中山大学化学系

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