Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation
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Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 26, Issue 2, Pages: 63-68(1987)
作者机构:
1. 中山大学物理学系
2. 南开大学物理学系
作者简介:
基金信息:
DOI:
CLC:
Published:1987,
Published Online:25 March 1987,
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Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 26(2):63-68(1987)
DOI:
Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 26(2):63-68(1987)DOI:
Photoemission Studies of Effect of the Surface Oxygen on the GaAs-A1 and GaAsrAu Interface Using Synchrotron Radiation
Using a soft x-ray photoemission spectroscopy (SXPS)
a chemical reaction is observed on the GaAs(110) surface with about 0.7 monolayer (ML) coverage of oxygen when Al is deposited at room temperature. The Al(<1ML)tendentiously reacts with surface oxygen bonded with As
then A1(>1ML) reacts with the others bonded with Ga
until all of the oxygen is consumed and additional Al replaces Ga in subsurface layers of the GaAs to form AlAs and drive Ga out across the interface. SXPS results show that on a similar oxygen covered surface only weak reaction is observed when Au deposition is below 1 ML. It is quite evident that additional Au (>1ML) disturbs the As-O bond and produces stable Ga oxide which inhibits the Ga below the oxide layer into Au