Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon

Zhang Xu; Mo Dang; Lin Chenglu; He Zhiping

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Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon

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- Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon
- Acta Scientiarum Naturalium Universitatis SunYatseni Vol. 34, Issue 2, Pages: 27-31(1995)
- 作者机构：
  
  1. 中山大学物理学系
  2. 中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1995，
  
  Published Online：25 March 1995，
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Zhang Xu, Mo Dang, Lin Chenglu, et al. Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 34(2):27-31(1995)
DOI：

Zhang Xu, Mo Dang, Lin Chenglu, et al. Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 34(2):27-31(1995) DOI：

摘要

测量了１２ｋｅＶ注入能量、８×１０￣（１４）～２×１０￣（１５）／ｃｍ￣２剂量砷离子注入硅的椭偏光谱，并用最优化拟合算法从椭偏光谱定出损伤分布。这种低能量离子注入的结果表明，损伤分布呈现为平台型，体内不出现峰值，损伤深度为１２．５～１６．０ｎｍ，与背散射沟道技术测定结果相符合。

Abstract

Damage profiles for l2keV

8 × 10￣(14)～2× 10￣(15)/cm￣2 As￣+ implanted Si samplesare determined by suitably optimizing the ellipsometric spectra. It is shown for the caseof very low energy iniplantation that the damage profile is plateau type and that there isno inside peak structure

The depth of damage is determined to be 12.5～16.0nm

which is consistent with the result measured by RBS/C technique

The ellipsometricspectroscopy is shown to be advantageous over RBS/C technique in resolution

thusproviding more details of dalnage profile with this work.

关键词

&nbsp椭偏光谱离子注入损伤分布

Keywords

&nbspspectroscopic ellipsometryion implantationdamage profile

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