An Improved Model for Analysis on ImpurityDistribution in Diode p-n Junction
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An Improved Model for Analysis on ImpurityDistribution in Diode p-n Junction
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 47, Issue 3, Pages: 37-40(2008)
作者机构:
中山大学物理科学与工程技术学院,广东,广州,510275
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Published:2008,
Published Online:25 May 2008,
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LI Chaorui, LIU Xiaowei. An Improved Model for Analysis on ImpurityDistribution in Diode p-n Junction. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 47(3):37-40(2008)
DOI:
LI Chaorui, LIU Xiaowei. An Improved Model for Analysis on ImpurityDistribution in Diode p-n Junction. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 47(3):37-40(2008)DOI:
An Improved Model for Analysis on ImpurityDistribution in Diode p-n Junction