Song Haili, Huang Rong. Atomic-scale origin of two-dimensional electron gas and two-dimensional hole gas in SrTiO₃/LaAlO₃/SrTiO₃ heterostructures[J/OL]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2026, 1-6.
DOI:
Song Haili, Huang Rong. Atomic-scale origin of two-dimensional electron gas and two-dimensional hole gas in SrTiO₃/LaAlO₃/SrTiO₃ heterostructures[J/OL]. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2026, 1-6.DOI: 10.11714/acta.snus.ZR20260107.
Atomic-scale origin of two-dimensional electron gas and two-dimensional hole gas in SrTiO₃/LaAlO₃/SrTiO₃ heterostructures
SrTiO₃/LaAlO₃/SrTiO₃ (substrate) sandwich heterostructures were grown on SrTiO₃ (001) substrates by pulsed laser deposition. Atomic-scale structural characterization reveals gradient La diffusion near the n-type interface (SrTiO₃ substrate/LaAlO₃), accompanied by partial reduction of Ti⁴⁺ to Ti³⁺, yielding a carrier concentration of approximately 4.98×10¹³ cm⁻². Ferroelectric-like displacement polarization vector analysis demonstrates that both interfaces exhibit a tail-to-head configuration: The SrTiO₃ polarization points toward the interface, while the LaAlO₃ polarization points away from the interface, with the LaAlO₃ polarization intensity being significantly stronger than that of SrTiO₃. At the n-type interface, the net negative bound charge generated by the tail-to-head ferroelectric-like polarization partially counteracts the electron accumulation driven by the polar discontinuity, resulting in an experimental carrier concentration approximately one order of magnitude lower than the theoretical value predicted by the polar catastrophe model. At the p-type interface, the net negative bound charge arising from the LaAlO₃ ferroelectric-like polarization acts synergistically with the hole requirement of the p-type polar discontinuity to drive two-dimensional hole gas formation. This study reveals the modulation mechanism of ferroelectric-like displacement polarization distributions induced by lattice distortions within the film on the dual-interface conduction behavior.
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